INTEGRATED CIRCUITS
DATA SHEET
TDA8928J
Power stage 2 x 10 or 1 x 20 W
class-D audio amplifier
Preliminary specification
2004 May 05
Supersedes data of 2004 Feb 04
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
1
FEATURES
3
GENERAL DESCRIPTION
• High efficiency (> 90 %)
The TDA8928J is a switching power stage for a high
efficiency class-D audio power amplifier system.
• Supply voltage from ±7.5 V to ±30 V
• Very low quiescent current
• High output power
With this power stage a compact 2 × 10 W self oscillating
digital amplifier system can be built, operating with high
efficiency and very low dissipation. No heatsink is
required. The system operates over a wide supply voltage
range from ±7.5 V up to ±30 V and consumes a very low
quiescent current.
• Diagnostic output
• Usable as a stereo Single-Ended (SE) amplifier
• Electrostatic discharge protection (pin to pin)
• No heatsink required.
2
APPLICATIONS
• Television sets
• Home-sound sets
• Multimedia systems
• All mains fed audio systems.
4
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
General
VP
Iq(tot)
η
supply voltage
total quiescent current
efficiency
±7.5
−
−
±12.5 ±30
V
no load connected; VP = ±12.5 V
Po = 10 W; RL = 8 Ω; VP = ±12.5 V
25
90
45
mA
%
−
Stereo single-ended configuration
Po
output power
RL = 8 Ω; THD = 10 %; VP = ±12.5 V
RL = 16 Ω; THD = 10 %; VP = ±12.5 V
9
10
5
−
−
W
W
−
5
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8928J
DBS17P
plastic DIL-bent-SIL power package; 17 leads (lead length 7.7 mm)
SOT243-3
SOT577-2
TDA8928ST
RDBS17P plastic rectangular DIL-bent-SIL power package; 17 leads (row
spacing 2.54 mm)
2004 May 05
3
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
6
BLOCK DIAGRAM
V
V
DD2
13
DD1
5
TDA8928J
6
BOOT1
OUT1
4
1
2
9
DRIVER
HIGH
EN1
SW1
CONTROL
AND
HANDSHAKE
7
DRIVER
LOW
REL1
STAB
temp
V
V
SS1
TEMPERATURE SENSOR
AND
CURRENT PROTECTION
3
DIAG
current
DD2
15
12
POWERUP
BOOT2
OUT2
14
17
16
DRIVER
HIGH
EN2
SW2
CONTROL
AND
HANDSHAKE
11
DRIVER
LOW
REL2
8
10
MGX377
V
V
SS2
SS1
Fig.1 Block diagram.
2004 May 05
4
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
7
PINNING
SYMBOL
PIN
DESCRIPTION
SW1
REL1
DIAG
1
2
3
digital switch input; channel 1
digital control output; channel 1
handbook, halfpage
SW1
REL1
DIAG
EN1
1
2
digital open-drain output for
overtemperature and overcurrent
report
3
EN1
4
5
6
7
8
9
digital enable input; channel 1
positive power supply; channel 1
bootstrap capacitor; channel 1
PWM output; channel 1
4
VDD1
V
5
DD1
BOOT1
OUT1
VSS1
BOOT1
OUT1
6
7
negative power supply; channel 1
V
8
STAB
decoupling internal stabilizer for
logic supply
SS1
STAB
9
TDA8928J
VSS2
10
11
12
13
14
15
negative power supply; channel 2
PWM output; channel 2
V
10
SS2
OUT2
BOOT2
VDD2
OUT2 11
bootstrap capacitor; channel 2
positive power supply; channel 2
digital enable input; channel 2
BOOT2 12
V
13
DD2
EN2
POWERUP
enable input for switching on
internal reference sources
EN2 14
POWERUP 15
REL2 16
REL2
SW2
16
17
digital control output; channel 2
digital switch input; channel 2
SW2 17
MGX378
Fig.2 Pin configuration.
2004 May 05
5
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
8
FUNCTIONAL DESCRIPTION
8.2
Protection
The TDA8928J is a two-channel audio power amplifier
system using class-D technology.
Temperature and short-circuit protection sensors are
included in the TDA8928J. The diagnostic output is pulled
down to VSS in the event that the maximum current or
maximum temperature is exceeded. The system shuts
itself down when pin DIAG is connected to pins EN1 and
EN2.
The power stage TDA8928J is used for driving the
loudspeaker load. It performs a level shift from the
low-power digital PWM signal, at logic levels, to a
high-power PWM signal that switches between the main
supply lines. A 2nd-order low-pass filter converts the PWM
signal into an analog audio signal across the loudspeaker.
8.2.1
MAXIMUM TEMPERATURE
Pin DIAG becomes LOW if the junction temperature (Tj)
exceeds 150 °C. Pin DIAG becomes HIGH again if Tj is
dropped to approximately 130 °C, so there is a hysteresis
of approximately 20 °C.
8.1
Power stage
The power stage contains high-power DMOS switches,
drivers, timing and handshaking between the power
8.2.2
MAXIMUM CURRENT
The following functions are available:
When the loudspeaker terminals are short-circuited this
will be detected by the current protection. Pin DIAG
becomes LOW if the output current exceeds the maximum
output current of 2 A. Pin DIAG becomes HIGH again if the
output current drops below 2 A. The output current is
limited at the maximum current detection level when pin
DIAG is connected to pins EN1 and EN2.
• Switch (pins SW1 and SW2): digital inputs; switching
from VSS to VSS + 12 V and driving the power DMOS
switches
• Release (pins REL1 and REL2): digital outputs;
switching from VSS to VSS + 12 V; follow pin SW1 and
SW2 with a small delay. Note: for self oscillating
applications this pin is not used
• Power-up (pin POWERUP): must be connected to a
continuous supply voltage of at least VSS + 5 V with
respect to VSS
• Enable (pins EN1 and EN2): digital inputs; at a level of
VSS the power DMOS switches are open and the PWM
outputs are floating; at a level of VSS + 12 V the power
stage is operational
• Diagnostics (pin DIAG): digital open-drain output; pulled
down to VSS if the maximum temperature or maximum
current is exceeded.
2004 May 05
6
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
9
LIMITING VALUES
In accordance with the Absolute Maximum Rate System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VP supply voltage
VP(sc)
MIN.
MAX.
±30
±30
UNIT
−
−
V
supply voltage for
V
short-circuits across the load
IORM
repetitive peak current in
output pins
−
2
A
Tstg
storage temperature
−55
−40
−
+150
+85
°C
°C
°C
Tamb
Tvj
ambient temperature
virtual junction temperature
150
Vesd(HBM)
(HBM)
all pins with respect to VDD (class 1a) −500
+500
V
V
V
all pins with respect to VSS (class 1a) −1500
+1500
+1500
all pins with respect to each other
(class 1a)
−1500
Vesd(MM)
(MM)
all pins with respect to VDD (class B)
all pins with respect to VSS (class B)
−250
−250
−250
+250
+250
+250
V
V
V
all pins with respect to each other
(class B)
Notes
1. Human Body Model (HBM); Rs = 1500 Ω; C = 100 pF.
2. Machine Model (MM); Rs = 10 Ω; C = 200 pF; L = 0.75 µH.
10 THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air
in free air
VALUE
UNIT
Rth(j-a)
Rth(j-c)
thermal resistance from junction to ambient
thermal resistance from junction to case
40
K/W
K/W
1.5
11 QUALITY SPECIFICATION
In accordance with “SNW-FQ611” if this device is used as an audio amplifier.
2004 May 05
7
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
12 DC CHARACTERISTICS
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage
total quiescent current
±7.5
−
−
±12.5
25
±30
45
10
V
Iq(tot)
no load connected
outputs floating
mA
mA
5
Internal stabilizer logic supply (pin STAB)
VO(STAB) stabilizer output voltage
Switch inputs (pins SW1 and SW2)
referenced to VSS
11.7
13
14.3
V
VIH
VIL
HIGH-level input voltage
LOW-level input voltage
referenced to VSS
referenced to VSS
10
0
−
−
15
2
V
V
Control outputs (pins REL1 and REL2)
VOH
VOL
HIGH-level output voltage
LOW-level output voltage
referenced to VSS
referenced to VSS
10
0
−
−
15
2
V
V
Diagnostic output (pin DIAG, open-drain)
VOL
ILO
LOW-level output voltage
output leakage current
no error condition
0
−
−
1.0
50
V
−
µA
Enable inputs (pins EN1 and EN2)
VIH
HIGH-level input voltage
LOW-level input voltage
hysteresis voltage
input current
referenced to VSS
referenced to VSS
9
−
5
15
−
−
V
VIL
0
V
VEN(hys)
II(EN)
−
−
4
V
−
300
µA
Switching-on input (pin POWERUP)
VPOWERUP
II(POWERUP)
operating voltage
input current
referenced to VSS
VPOWERUP = 12 V
5
−
100
12
V
−
170
µA
Temperature protection
Tdiag
Thys
temperature activating diagnostic VDIAG = VDIAG(LOW)
150
−
20
−
−
°C
°C
hysteresis on temperature
diagnostic
VDIAG = VDIAG(LOW)
−
Current protection
IO(ocpl)
overcurrent protection level
−
2.1
−
A
Note
1. Temperature sensor or maximum current sensor activated.
2004 May 05
8
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
13 AC CHARACTERISTICS
VP = ±12.5 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Po
output power
RL = 8 Ω
THD = 0.5 %
7(2)
9(2)
8
−
−
W
W
THD = 10 %
RL = 16 Ω
10
THD = 0.5 %
−
−
4
5
−
−
W
W
THD = 10 %
THD
total harmonic distortion
efficiency endstage
fi = 1 kHz
−
−
−
0.05
0.2
90
0.1
−
−
%
%
%
fi = 10 kHz
η
Notes
1. VP = ±12.5 V; RL = 8 Ω; fi = 1 kHz; fosc = 310 kHz; Rs = 0.1 Ω (series resistance of filter coil); Tamb = 25 °C;
measured in reference design (SE application) shown in Fig.5; unless otherwise specified.
2. Indirectly measured; based on Rds(on) measurement.
3. Total Harmonic Distortion (THD) is measured in a bandwidth of 22 Hz to 20 kHz (AES 17 brickwall filter). When
distortion is measured using a low-order low-pass filter a significantly higher value will be found, due to the switching
4. Efficiency for power stage.
2004 May 05
9
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
14 SWITCHING CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
PWM outputs (pins OUT1 and OUT2); see Fig.3
tr
rise time
−
30
−
−
−
−
ns
ns
ns
ns
tf
fall time
−
−
−
30
tblank
tPD
blanking time
propagation delay
70
from pin SW1 (SW2) to
pin OUT1 (OUT2)
200
tW(min)
Rds(on)
minimum pulse width
−
−
220
0.2
270
0.4
ns
on-resistance of the output
transistors
Ω
1/f
osc
V
DD
PWM
output
(V)
0 V
V
SS
t
t
t
r
f
blank
t
PD
V
STAB
V
SW
(V)
V
SS
V
STAB
V
REL
(V)
V
SS
MGW145
100 ns
Fig.3 Timing diagram PWM output, switch and release signals.
10
2004 May 05
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h
V
V
5
DD2
13
DD1
TDA8928J
BOOT1
6
7
12 kΩ
EN1
4
DRIVER
HIGH
15 nF
CONTROL
AND
OUT1
SW1
1
HANDSHAKE
REL1
2
9
DRIVER
LOW
STAB
DIAG
V
V
OUT1
temp
V
V
SS1
TEMPERATURE SENSOR
AND
3
2V
P
current
DD2
12
CURRENT PROTECTION
POWERUP
15
BOOT2
OUT2
12 V
EN2
14
17
16
DRIVER
HIGH
15 nF
100
nF
CONTROL
AND
HANDSHAKE
SW2
11
REL2
DRIVER
LOW
V
V
OUT2
V
V
V
V
8
10
V
V
V
V
V
V
V
V
EN
SW1
REL1
STAB
SW2
REL2
DIAG
V
SS1
SS2
12 V
0
12 V
0
MGX379
Fig.4 Test diagram.
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
15.1 SE application
15.2 Package ground connection
The heatsink of the TDA8928J is connected internally to VSS
.
15.3 Output power
The output power in SE self oscillating class-D applications can be estimated using the formula
2
RL
× V
------------------------------------------------
P
(RL + Rds(on) + Rs)
Po(1%)
=
----------------------------------------------------------------------
2 × RL
[VP]
RL + Rds(on) + Rs
The maximum current IO(max)
=
should not exceed 2 A.
-------------------------------------------
Where:
RL = load impedance
Rs = series resistance of filter coil
Po(1%) = output power just at clipping.
The output power at THD = 10 %: Po(10%) = 1.25 × Po(1%)
.
15.4 Reference design
The reference design for a self oscillating class-D system for the TDA8928J is shown in Fig.5. The Printed-Circuit Board
2004 May 05
12
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L1
V
V
CON1
supply
DDP
bead
C3
C1
100 nF
470 µF
+14.5 V
(35 V)
1
2
3
C4
C2
100 nF
470 µF
−14.5 V
(35 V)
L2
SSP
bead
V
V
V
DDP
DDP
R1
10 kΩ
J1
2
1
C28
560 pF
C39
R32
V
DDP
R9
C29
560 pF
R33
3.9
kΩ
100 Ω
2.2 nF
470 µF
C10
220 nF
C14
22 µF (100 V)
C5
C7
(35 V)
R3
R19
5.6 Ω
1 kΩ
SSP
1 kΩ
STAB (U1,9)
R26
L3
0 Ω
C19
V
SSP
U2A
LM393
R11
2 kΩ
C16
100 nF
33 µH
8
C34
220 nF
22 µF
(100 V)
2.2 nF
C20
2
3
C9
220 nF
C12
15 nF
LS1
8 Ω
C8
1
C17
C32
470 nF
R22
22 Ω
220 nF
2.2 nF
R5
4
1
V
V
DD2
V
DD1
SSP
OUT1
100 nF
C15
5
13
SW1
1
7
J3
2
C24
1 µF
V
DDP
220 kΩ
REL1
R30
R13
15 kΩ
2
BOOT1
STAB
6
9
V
DDP
C40
R7
POWERUP
DIAG
15
3
39 kΩ
C27
22 µF
(100 V)
R24
In1
In2
47 nF 3.9 kΩ
U1
TDA8928J
R15
10 kΩ
R10
0 Ω
C28
100 nF
J2
22 µF (100 V)
0 Ω
S1
power-ON
2
1
EN1
R14
15 kΩ
4
DZ1
36 V
V
V
SSP
EN2
14
16
17
R31
R28
0 Ω
R8
C41
BOOT2
OUT2
V
REL2
SW2
12
11
SSP
Q1
DDP
C25
1 µF
39 kΩ
BC848
R25
2 kΩ
3.9 kΩ
47 nF
R29
0 Ω
8
10
R6
R16
1 kΩ
V
V
SS2
L4
SS1
V
220 kΩ
SSP
Q2
C38
C37
DZ2
3.3 V
R17
5.6 kΩ
33 µH
BC856
100 nF
220 pF
C21
C35
220 nF
LS2
8 Ω
V
C13
15 nF
SSP
U2B
LM393
V
SSP
2.2 nF
C22
5
6
C6
470 µF
(35 V)
7
R21
5.6 Ω
C33
470 nF
R23
22 Ω
C11
220 nF
R12
2 kΩ
2.2 nF
R4
V
V
DDP
STAB (U1,9)
C30
560 pF
1 kΩ
R34
3.9 kΩ
C42
R35
C31
560 pF
2.2 nF 150 Ω
R2
10 kΩ
SSP
mgx380
Fig.5 Single-ended self oscillating class-D system application diagram for TDA8928J.
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
15.4.1 PRINTED-CIRCUIT BOARD
The printed-circuit board dimensions are 8.636 × 5.842 cm; single-sided copper of 35 µm; silk screen on both sides;
79 holes; 94 components (32 resistors and 41 capacitors).
R24
pin 1
C10
R26
R30 C28
R1 R11
R32
C24
C25
C8
C9
C45
C36
R33
R34
C34
R35
C26
R19
C26
R21
C31
C11
R12
C16
R22
R2
C30
R15 C37
R31
R13
R14
U2
R3
R4
C22
C21
R6
R29
C19
C50
R5
C35
R9
Q1
R28
R7
R17
R10
Q2
R23
C17
C41
C2
C1
R8
R16
C40
OUT1
OUT2
C13
+
− −
+
IN2
IN1
22 V
V
DD
GND
C38
C12
R25
Bottom silk
MDB615
Fig.6 Printed-circuit board (bottom silk) layout for TDA8928J.
Bottom copper
MDB617
Fig.7 Printed-circuit board (bottom copper) layout for TDA8928J.
14
2004 May 05
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
TDA8928ST
U1
L3
C5
J2
J1
C27
state of D art
typ +/- 12.5 V
2 x 10 W in 8 Ω
single layer
V
C7
P
C6
C4
L4
demo PCB v2r4
RL 1 2003
DZ1
C14
C15
J3
L1
C3
L2
C33
C32
S1
DZ2
CO2
CO1
In2
Con3
Con2
Con1
Out1
Out2
power_on
In1
Top silk
Fig.8 Printed-circuit board (top silk) layout for TDA8928ST.
mgx381
15.4.2 BILL OF MATERIALS
COMPONENT
DESCRIPTION
TDA8928ST
TYPE
COMMENTS
U1
Philips Semiconductors,
SOT577-2
U2
LM393AD
National, SO8
alternatives: TI
semiconductors and On
semiconductors
DZ1
DZ2
Q1
36 V Zener diode
3.3 V Zener diode
BC848 transistor
BC856 transistor
bead
BZX-79C36V, DO-35
BZX-79C3V3, DO-35
NPN, SOT23
used as jumper
used as jumper, optional
Q2
PNP, SOT23
L1, L2
L3, L4
S1
Murata BL01RN1-A62
Toko 11RHBP-330M ws
used as jumper
totally shielded
optional
33 µH coil
power-on switch
PCB switch, SACME
09-03290-01
Con1
V
SS, GND, VDD connector
Augat 5KEV-03
optional
optional
optional
Con2, Con3
CO1, CO2
J1, J2, J3
Out2, Out1 connector
In1, In2 connector
wire
Augat 5KEV-02
Cinch Farnell 152-396
Jumpers, D = 0.5 mm
Capacitors
C37
220 pF, 50 V
560 pF, 100 V
SMD0805
SMD0805
C28, C29, C30,
C31
50 V is OK
2004 May 05
15
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
COMPONENT
DESCRIPTION
2.2 nF, 50 V
TYPE
COMMENTS
C19, C20, C21,
C22, C39, C42
SMD0805
C12, C13
C40, C41
15 nF, 50 V
47 nF, 50 V
SMD0805
SMD1206
SMD0805
C1, C2, C16, C17, 100 nF, 50 V
C26, C38
C8, C9, C10, C11, 220 nF, 50 V
C34, C35
SMD1206
C8 to C11 used as jumper
C32, C33
C24, C25
470 nF, 63 V
1 µF, 16 V
22 µF, 100 V
MKT
SMD1206
1206 due to supply range
63 V is OK
C7, C14, C15,
C27
Panasonic NHG Series
ECA1JHG220
C3, C4, C5, C6
470 µF, 35 V
Panasonic M Series
ECA1VM471
C18, C23, C36
these capacitors have been
removed
Resistors
R10, R26, R28,
R29
0 Ω
SMD1206
SMD0805
used as jumpers
R24
0 Ω
short-circuited in a new
printed-circuit board layout
R19, R21
R22, R23
R35
5.6 Ω, 0.25 W
22 Ω, 1 W
150 Ω
100 Ω
1 kΩ
1 kΩ
2 kΩ
2 kΩ
SMD1206
SMD2512
SMD1206
SMD1206
SMD1206
SMD0805
SMD1206
SMD0805
SMD0805
SMD0805
SMD0805
SMD0805
SMD0805
SMD0805
1206 due to dissipation
2512 due to dissipation
used as jumper
R32
used as jumper
R9
used as jumper
R3, R4, R16
R11, R12
R25
used as jumpers
R7, R8, R33, R34 3.9 kΩ
R17
5.6 kΩ
10 kΩ
15 kΩ
39 kΩ
220 kΩ
R1, R2, R15
R13, R14
R30, R31
R5, R6
R18, R20, R27
these resistors have been
removed
2004 May 05
16
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
15.5 Curves measured in reference design
MGX383
MGX384
2
2
10
10
handbook, halfpage
THD + N
(%)
handbook, halfpage
THD + N
(%)
10
10
1
(1)
1
(1)
(2)
−1
−1
10
10
(2)
(3)
−2
−2
10
10
−3
−3
10
10
10
2
3
4
5
−2
−1
2
10
10
10
10
10
10
1
10
10
f (Hz)
P
(W)
i
o
2 × 8 Ω SE; VP = ±12.5 V.
(1) 6 kHz.
2 × 8 Ω SE; VP = ±12.5 V.
(1) Po = 10 W.
(2) 1 kHz.
(3) 100 Hz.
(2) Po = 1 W.
Fig.9 THD + N as function of output power.
Fig.10 THD + N as function of frequency.
MGX385
MGX386
0
100
handbook, halfpage
handbook, halfpage
SVRR
(dB)
η
(%)
−10
80
−20
−30
−40
60
40
(1)
(2)
(3)
(4)
20
0
−50
−60
2
3
4
5
0
2
4
6
8
10
10
10
10
10
10
f (Hz)
i
P
(W)
o
VP = ±12.5 V; Vripple(p-p) = 2 V.
(1) Both supply lines in phase.
(2) One supply line (VSS) rippled.
(3) One supply line (VDD) rippled.
(4) Both supply lines in antiphase.
2 × 8 Ω SE; VP = ±12.5 V; fi = 1 kHz.
Fig.11 Efficiency as function of output power.
Fig.12 SVRR as function of frequency.
2004 May 05
17
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
MGX387
MGX388
100
0
handbook, halfpage
handbooαk, halfpage
S/N
cs
(dB)
(dB)
80
60
40
20
0
−20
−40
−60
−80
(1)
(2)
−100
−2
−1
2
2
3
4
5
10
10
10
1
10
10
10
10
10
10
f (Hz)
P
(W)
i
o
2 × 8 Ω SE; VP = ±12.5 V.
(1) Po = 1 W.
(2)
Po = 10 W.
2 × 8 Ω SE; VP = ±12.5 V.
Fig.14 Channel separation as function of
frequency.
Fig.13 S/N as function of output power.
MDB624
MGX389
35
24
handbook, halfpage
G
handbook, halfpage
P
o
(dB)
(W)
20
30
25
20
15
16
12
(1)
(2)
8
10
10
4
10
2
3
4
5
10
10
10
10
12
14
16
18
20
f (Hz)
i
V
(V)
P
THD + N = 10 %; fi = 1 kHz.
(1) 2 × 8 Ω SE.
(2) 2 × 16 Ω SE.
2 × 8 Ω SE; VP = ±12.5 V; Vi = 100 mV.
Fig.15 Gain as function of frequency.
Fig.16 Output power as function of supply voltage.
2004 May 05
18
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
16 PACKAGE OUTLINE
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 7.7 mm)
SOT243-3
non-concave
x
D
h
D
E
h
view B: mounting base side
A
2
d
B
j
E
A
L
3
L
c
2
v
M
Q
1
17
e
e
m
w
M
1
Z
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
b
c
D
d
D
E
e
e
e
E
j
L
L
3
m
Q
v
w
x
Z
2
p
h
1
2
h
17.0 4.6 0.75 0.48 24.0 20.0
15.5 4.4 0.60 0.38 23.6 19.6
12.2
11.8
3.4
3.1
8.4
7.0
2.4
1.6
2.00
1.45
2.1
1.8
6
mm
10
2.54 1.27 5.08
0.6
4.3
0.25 0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-17
03-03-12
SOT243-3
2004 May 05
19
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads
(row spacing 2.54 mm)
SOT577-2
non-concave
D
h
x
D
E
h
view B: mounting base side
A
2
d
B
j
E
A
L
Q
c
e
2
1
Z
17
w
e
M
1
M
v
L
1
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
b
c
D
d
D
E
e
e
1
e
E
h
j
L
L
Q
v
w
x
Z
2
p
h
2
1
4.6 0.75 0.48 24.0 20.0
4.4 0.60 0.38 23.6 19.6
12.2
11.8
3.4 3.75 3.75
3.1 3.15 3.15
2.00
1.45
2.1
1.8
6
mm
10
2.54 1.27 2.54
13.5
0.6
0.4
0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
01-01-05
03-03-12
SOT577-2
2004 May 05
20
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
17 SOLDERING
The total contact time of successive solder waves must not
exceed 5 seconds.
17.1 Introduction to soldering through-hole mount
packages
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
17.3 Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
17.2 Soldering by dipping or by solder wave
Driven by legislation and environmental forces the
worldwide use of lead-free solder pastes is increasing.
Typical dwell time of the leads in the wave ranges from
3 to 4 seconds at 250 °C or 265 °C, depending on solder
material applied, SnPb or Pb-free respectively.
300 and 400 °C, contact may be up to 5 seconds.
17.4 Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING
WAVE
CPGA, HCPGA
−
suitable
DBS, DIP, HDIP, RDBS, SDIP, SIL
PMFP(2)
suitable
suitable(1)
−
not suitable
Notes
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
2. For PMFP packages hot bar soldering or manual soldering is suitable.
2004 May 05
21
Philips Semiconductors
Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TDA8928J
18 DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
19 DEFINITIONS
20 DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 May 05
22
Philips Semiconductors – a worldwide company
Contact information
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R30/02/pp23
Date of release: 2004 May 05
Document order number: 9397 750 13041
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